| 摘要 |
GaAs single crystals doped with boron and having a lowered dislocation density are grown from a GaAs melt covered with B2O3 melt as a liquid encapsulant. The method comprises using a crucible made of a material selected from the group consisting of PBN, AlN and Al2O3 as a crucible for holding the GaAs melt, adding 0.25 to 0.95 atomic percent of boron to the GaAs melt under conditions such that the residual oxygen quantity is at most 5x10-2 mole percent to the GaAs melt, and thereby adjusting the concentration of boron in the grown crystal to 2x1018 to 1x1019 atoms per cm3. The method is applied to an LE-VB method and an LE-VGF method as well as an LEC method. |
