| 摘要 |
PURPOSE:To obtain a thin film read element having simple structure, a speedy photo response, and having no defect by a method wherein an i type or a p type amorphous Si layer is accumulated on a skewer type foundation electrode on a substrate, and a metal electrode having no reactivity therewith is arranged intersecting at right angles. CONSTITUTION:Cr, a Cr alloy or Ni, an Ni alloy or Al polished to have a mirror face or Al2O3 is adhered as the foundation metal 2 on mirror polished glass or the glazed substrate 1, and patterning of the photo detector and wirings is performed. The i type or the p type amorphous Si layer 3 is formed according to glow discharge of SiH4 in succession, and the transparent electrode ITO4 is arranged in the prescribed form. According to the selection of the foundation metal and the surface treatment thereof, abnormal growth of conductive Si is not generated, and the element having the speedy photo response can be obtained with simple structure. |
