发明名称 |
Method of fabrication of dielectrically isolated CMOS device with an isolated slot. |
摘要 |
<p>A method of fabricating an integrated circuit on a body of semiconductor material having a major surface layer of (110) crystallographic orientation by etching vertical slots into the layer to form distinct islands; depositing dopant species in predetermined ones of the silicon islands so that the major surface and exposed edges of ones of the islands become second conductivity type; and thermally oxidizing the exposed surface portions of the body so that oxide fills the vertical slots between the islands.</p> |
申请公布号 |
EP0078890(A2) |
申请公布日期 |
1983.05.18 |
申请号 |
EP19820106907 |
申请日期 |
1982.07.30 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
SOCLOF, SIDNEY ISAAC |
分类号 |
H01L27/08;H01L21/762;H01L21/8238;H01L29/04;H01L29/78;(IPC1-7):01L21/76;01L21/82 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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