| 摘要 |
<p>PURPOSE:To simplify compensation of resistance value of a semiconductor device by selectively cutting a metal wiring at the specified region between terminals of resistance layers after the end of diffusion. CONSTITUTION:A resistance 2 is provided on a Si substrate 1, it is connected by a metal lead 4 through a hole of insulation film 3, the wiring 4 can be but at the specified locations x1-xn between the terminals 5 of resistors R1-Rn. Here, R is the main resistance of device. When the lead is selectively cut at the locations x1-xn after the end of all diffusions, n-kinds of compensations of resistance values from R1 to R1+R2+...+Rn are made possible. Various kinds of compensations of resistance values can be realized easily by providing resistance patterns and metal wiring patterns of various kinds.</p> |
