| 摘要 |
<p>PURPOSE:To obtain a semiconductor photoamplifier element having photodetecting, amplifying and light emitting functions by utilizing avalanche in a semiconductor junction. CONSTITUTION:A p-n junction J1 is reversely biased, and when an external signal is incident as shown by an arrow A from the surface of the second n type AlGaAs layer 5, electrons e and holes h pairs are produced in the vicinity of the junction J1. When the voltage applied to the junction J1 is determined to the degree of producing avalanche, the generated electrons and holes sequentially collide with a lattice, thereby generating electrons and holes, and the holes h move toward a p type AlGaAs layer 5. When the layer 4 is decreased in thickness at this time, the holes H do not move toward the third electrode 9, but move by diffusing toward the layer 3. Since the p-n junction is forwardly biased, the electrons e injected to the layer 3 from the first n type AlGaAs layer 2 are recombined with the holes h diffused to the layer 3, thereby emitting the light, and the light is produced from the bottom of a recess 6 formed on an n type GaAs substrate 1.</p> |
