| 摘要 |
PURPOSE:To newly add the degree of freedom to the design and manufacturing process of an integrated circuit by wiring polycrystalline silicon having a P-N junction in the gate structure of a silicon gate MOSFET, and providing a P junction for a region as a gate electrode. CONSTITUTION:A P type region 4 is inserted into the parts of N type polycrystalline silicons 3', 3'' connected to a gate electrode, and reverse and forward diodes are added to the wirings to the gate. A gate signal inputted from 3' is delayed by the signal via a diode formed of 3'-4 and 4'-3'', thereby effectively varying the conductance of a driver MOSFET, and the threshold voltage of the driver MOSFET is varied at the output level after the prescribed time from the application of the input. |
