| 摘要 |
<p>PURPOSE:To obtain a semiconductor integrated circuit device capable of setting a substrate potential to a stable GND potential by forming an adjacent P type impurity diffused layer on an N type impurity diffused layer formed on a P type substrate and connecting and grounding the P type layer to the N type layer with the same conductor. CONSTITUTION:The first impurity diffused layer formed by diffusing an N type impurity on the surface of a substrate, an insulator layer 5 and the second impurity diffused layer 12 of the impurity density higher than the substrate 3 formed by diffusing a P type impurity in the surface of the substrate 3 are formed adjacent to the first layer 4. Since the layers 4 and 12 are simultaneously connected via a conductor 6, they become the same potential, and since the layer 12 and the substrate 3 are of the same P type, they become the same potential, and the layers 4 and the substrate 3 can be effectively set to a GND potential without using wirings. The semiconductor substrate may be N type, and is replaced by an N type impurity diffused layer, thereby performing the similar effects.</p> |
