| 摘要 |
<p>PURPOSE:To suppress the irregularity in the light emitting surface of a light emitting intensity breaking frequency by improving the irregularity of a current in the surface. CONSTITUTION:Double hetero junctions of an n type AlGaAs clad layer 2, an n or p type GaAs active layer 3 and a p type AlGaAs clad layer 4 are formed on an n type AsGa substrate 1, and part of the junctions is removed, thereby forming an n type AlGaAs layer 5 having a hole exposed with the layer 4. Since a p<+> type semiconductor layer 9 grown over the layer 5 and the layer 4 exposed at the hole of the layer 5 can be formed in high impurity density of the same degree as the conventional p<+> type diffused layer and in sufficiently thick at the part contacted with the layer 4, the current flowing through the layer 9 can sufficiently flow to the vicinity of the center directly above the light emitting unit contacted with the layer 4. Then, an image of near visual field can obtain a single peak response which is not deflected in the intensity distribution, and the coupling to an optical fiber can obtain high efficiency as compared with the conventional light emitting diode.</p> |
