| 摘要 |
PURPOSE:To obtain with good productivity a high accuracy pattern having less dimensional changes and shape deformations of pattern due to a photo-diffraction, by setting the exposure time less than three seconds regardless of the intensity of illumination. CONSTITUTION:The so-called poor contact that a photo mask is separated from a wafer during a contact exposure does not occur at the initial part of the exposure. In other words, when the photo mask and the wafer are exposed in a state of mechanical compression bonding, for the first approx. three seconds, the poor contact does not occur even N2 gas is emitted from the photo resist, but after approx. three seconds, it suddenly occurs. The occurence of a poor contact can be reduced by setting the exposure time less than approx. three seconds. Further, the occurence of the poor contact can be eliminated at all by setting the exposure time at approx. two seconds or less. |
