发明名称 MANUFACTURE OF WAVELENGTH CONTROLLING SEMICONDUCTOR LASER
摘要 PURPOSE:To form a barrier for confining beams, and to pinch currents injected near an active layer by exposing a section up to the vicinity of a boundary with an optical guide layer through the etching of the second clad layer and shaping periodic structure to the surface exposed. CONSTITUTION:Only both flow stopping layers of striped projections 2a, 2b dissolved when growing are shaped to the upper sections of the striped projections 2a, 2b. A photo-resist film is formed onto an InP layer 8, a section in the vicinity of the upper section of the striped projection 2b is exposed and removed through development, and the section up to a section extremely adjoining to the optical guide layer 5a is exposed through chemical etching. A photo-resist film is shaped to the surface exposed on the striped projection 2b, a diffraction grating at a predetermined period is formed in the approximately vertical direction to the longitudinal direction of the striped projection 2b through an interference exposure method, and the diffraction grating is transferred onto a P-InP layer 6 through a chemical etching method.
申请公布号 JPS5879792(A) 申请公布日期 1983.05.13
申请号 JP19810178050 申请日期 1981.11.06
申请人 NIPPON DENKI KK 发明人 SEKI MASAFUMI
分类号 H01L21/208;H01S5/00;H01S5/12;H01S5/125 主分类号 H01L21/208
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