| 摘要 |
PURPOSE:To increase the growth rate of a single crystal of diamond, and to obtain a large-sized diamond single crystal, easily, by cutting a seed diamond crystal at a specific plane, and making the growth of a diamond crystal on the plane. CONSTITUTION:A diamond crystal is cleaved, cut or polished to expose its (111) plane, and used as a seed crystal. The seed crystal is placed in a mixture 2 of carbon and a solvent metal, and the mixture is put into a cylindrical carbon heater interposing a pressure medium 3 therebetween. The cylinder is set in an ultra-high pressure device, and pressed under definte high temperature and pressure to allow the rapid growth of diamond crystal on the (111) plane. A large- sized diamond crystal having low impurity content can be prepared easily by this process. |
