| 摘要 |
PURPOSE:To prevent short-circuiting troubles to be caused by abnormally grown metal silicide by a method wherein silicide is formed only in places, of the electrode wirings included in a semiconductor device, other than the places in the vicinity of points of ohmic contact whereat contact is established with the substrate. CONSTITUTION:In a transistor-constituting semiconductor device, the superficial portion of a region 5a formed by diffusion for the provision of an auxiliary base 10 and emitter 11, is covered with an Si oxide film 13 formed by a thermal oxidation process, and another Si electrode wiring region 5b is covered with an Si nitride film 3. The part located over the electrode wiring region 5b of the Si nitride film 3 is completely removed to be replaced with a complete coating of a metal, capable of forming a silicide, formed by evaporation or sputtering, and then heat treatment is performed. Accordingly, the silicide 24 is formed on the surface of the electrode wiring region 5b only, and the absence of silicide on the Si oxide film 13 can prevents emitter short-circuiting. |
