| 摘要 |
PURPOSE:To improve the accuracy and the efficiency of the evaluation of a semiconductor by a method wherein a discrete Fourier coefficient is determined from the measured outputs of a semiconductor element with application of a bias pulse voltage thereto to measure the time constant of a transient response. CONSTITUTION:A bias pulse voltage V is applied to a semiconductor element 1 from a pulse voltage generation source 3 to measure a transient capacitance C(t) at K time points t0, t1...t(k-1) and the results are inputted into a computer 6 via a digital voltmeter 5. Then, with the computer 6, a discrete Fourier transformation is applied to the output of the digital voltmeter 5 at various temperatures of the semiconductor element 1 to determine discrete Fourier coefficients a0, an and bn from which the time constant gamma of the transient capacitance C(t) at various temperatures of the semiconductor 1 are determined to discern deep levels of the element 1. Thus, the semiconductor element can be evaluated with a higher accuracy and efficiency. |
