| 摘要 |
PURPOSE:To easily form a high performance insulating protection film by forming a substance which can be converted to a stable insulator on the surface of compound semiconductor substrate and thereafter converting it into an insulator. CONSTITUTION:A substrate 1 is composed of a single crystal substrate of GaAs and an Si layer 2 is formed thereon by the conventional method such as CVD, sputtering or vacuum-deposition. Thereafter, the Si layer 2 is converted to an SiO2 layer 2' by the pressurized oxidation method. As a result, the SiO2 layer increases the volume as compared with the Si layer. Therefore, pin-holes and missing portions generated during growth of Si are filled with such SiO2 layer and a high quality insulating protection film is formed. |
