| 摘要 |
PURPOSE:To prevent the generation of the breaking phenomenon of a bonding wire, and to obviate a soft error by alpha particles by forming the first frame- shaped organic resin layer to the peripheral section of the active region of a memory circuit shaped to the surface of a semiconductor element and forming the second resin layer to the upper section of said active region through potting. CONSTITUTION:The frame-shaped resin layer 17 is shaped to the peripheral section of the active region 16 of the semiconductor memory element 12, and the second resin layer 18 for shielding alpha particles radiated from the inside of molding resin 14 is formed through a potting method. Contact with the bonding wire can be prevented because the frame-shaped resin layer 17 stops outflow in case of the potting of the resin layer 18 for shielding alpha-rays. |
