| 摘要 |
PURPOSE:To improve burning resisting property without sacrifice of high frequency characteristics, with regard to the structure of a Schottky barrier diode used at high frequencies, by providing an insulating film on a semiconductor substrate, and forming a metal semiconductor junction part around the outer surface thereof. CONSTITUTION:The Schottky barrier is a part 36. The insulating film 35 is provided between the semiconductor substrate 31 and a metal 33 at the central part of the diode. The length of the circumference can be made longer with respect to the required area of the Schottky barrier. With burning energy per unit circumferential length being constant, the burning energy of the entire Schottky barrier diode can be increased, and the burning resisting property can be improved. |
