| 摘要 |
PURPOSE:To realize free selection of conditions for highly accurate manufacturing without precipitation of carbon by using a mixed gas of halogen gas and oxygen gas for selective etching. CONSTITUTION:The opposing parallel electrode plates 32, 33 are provided within a chamber 31. An upper electrode 32 is grounded, while a high frequency power source 35 is connected to a lower electrode 33 through a matching device 34. The cooling water W is caused to flow to said lower electrode 33. An electrode material 36 is placed on the lower electrodes 36 and a material to be etched is then placed thereon. The halogen gas X2 which is a reaction gas and the oxygen gas which is an additive gas are adjusted to the specified flow rate and are introduced into the chamber through a gas inlet hole 38. The extra gas and biproduct of reaction within the chamber 31 are exhausted from the exhaust hole 39. A material to be etched 37 is etched during the grow discharge generated within the chamber by applying a high frequency power to the reactive ion etching apparatus. |
