| 摘要 |
PURPOSE:To facilitate taper formation by a method wherein irregular parts with a pitch interval of 2mum or less are provided around a using mask pattern and a taper is formed at the circumference of a resist by reflaction light passing through the irregular parts when a taper for preventing stepped disconnection of wiring is formed around a resist pattern used when manufacturing a magnetic bubble memory element. CONSTITUTION:A resist film 6 is applied on a base 7 for resist and a mask substrate 1 having a predetermined pattern 2 is placed on the resist film 6 through a microgap 5. Next, irradiation light 3 is applied on the substrate 1 and after exposing the resist film 6 at the part covered with no mask pattern 2, development is done and a desired pattern consisting of the resist film 6 is obtained by removing the substrate 1. At that time, the circumference of the pattern 2 provided at the substrate 1 is not linear and innumerable and continuous irregular parts with an interval of 2mum or less are provided. This deflects the light at the time of exposure passing through the irregular parts by the irregular parts and a suitable taper is generated at the obtained resist pattern. |
