| 摘要 |
1. A semiconductor component comprising a semiconductor body, consisting of a substrate (1) of the first conductivity type and at least one zone (2) of the opposite conductivity type embedded in planar manner in the substrate, an insulating layer (4) on that surface in which the embedded zone is arranged, an electrode (14) which contacts said zone (2), a channel-stopper (6) which is arranged on the insulating layer (4) outside of said zone at the edge of the semiconductor body and is electrically connected to the substrate, and a field plate (10) which is arranged on the insulating layer between this zone and the channel-stopper and is electrically connected to the zone, characterised in that the channel-stopper (6) consists of at least two steps (7, 8), and that the step which is in each case closer to the said zone (2) is arranged at a greater distance from the surface of the semiconductor body than the respective preceding step. |
