| 摘要 |
PURPOSE:To obtain a high reliable electrode by a method wherein one of a high melting point metal (W, TaMo, Nb, Hf, mainly) and another metal are accumlated in a multilayer type. CONSTITUTION:Ti 1 and W 2 are evaporated on a GaAs substrate 4, for example, forming respective thickness as about 0.1mum and repeating alternately for 5-6 times, and Au 3 is accumulated. Because W of a high melting point is interposed, diffusion is not generated even at 1,000 deg.C, and a chemical reaction is not advanced between the substrate or the wiring 3. Moreover because Ti having the Young's modulus being about 1/4 of W is inserted alternately, brittleness of W is complemented, and no crack is generated. Moreover, Ti has favorable adhesion with GaAs, the obstruction property of W and elastic adhesion of Ti act for complementing mutually, and because no expensive alloy is used, a high reliable electrode can be obtained economically. |
