| 摘要 |
PURPOSE:To obtain a semiconductor having high quality and uniformity by covering in advance the inner wall of a reaction tube or a liner tube provided inside the reaction tube in the region of a substrate with a semiconductor material. CONSTITUTION:A carbon susceptor 2 is placed in a reaction tube 1, is heated at the temperature higher by 50-100 deg.C than the ordinarily epitaxial growing temperature, and SiH4 is flowed as reaction gas in a direction of an arrow for approx. 30min., thereby decomposing it. The first Si film 3 of approx. 3mum thick is deposited slightly at the downstream of the region of the substrate. Then, the susceptor is moved to the upstream, the second film 4 is formed subsequent to the first film 3, and the tubular wall is covered in the length substantially twice the susceptor. In this manner, a coating film of approx. 30mum thick is formed on the tubular wall, an Si substrate is then mounted on the susceptor, and Si is deposited at the ordinary growing temperature. |
