| 摘要 |
PURPOSE:To effectively disconnect an active layer at the edge part of a mesa by forming in advance two mesa stripes of approx. 10mum wide and growing an InGaAsP buried active layer at the intermediate part of the two mesa stripes. CONSTITUTION:Zn of p type impurity is diffused in the depth of approx. 1mum on the surface of an n type InP substrate 101 of plane azimuth (100), thereby forming a Zn diffused layer 102 in a semiconductor wafer. In the wafer, two photoresist masks are formed parallel to the (011) direction, are then etched, thereby forming two mesa stripes 103, 104 to become 10mum in width, and a burying growth is then performed. Then, an n type InP buffer layer 105, an InGaAsP active layer 106, p type InP clad layer 107 and an n type InGaAsP electrode layer 108 are sequentially grown thereon. |
