| 摘要 |
PURPOSE:To improve the stability and reliability of the operation of a semiconductor integrated circuit device by removing at least part of nitrided film of the region having no part whereon a hole is to be opened. CONSTITUTION:When the region covered with a nitrided film 30 is large area like the ROM of an IC, dummy contacts 33 are filled at an equal interval of 1,200mum, and a hole is opened at the film 30, thereby forming a part having no nitrided film. Hydrogen ions are injected at the hydrogen annealing time from the hole of the contact 33, thereby allowing the Vtau, gm of an MOS transistor to be stable at the periphery of the hole. The more the dummy contacts exist, more uniform the Vtau, gm of the entire ROM become, but since the integration is lowered, it is most preferable to insert at a pitch of less than twice of the length for eliminating the hydrogen annealing effect from the hole. |
