| 摘要 |
PURPOSE:To remarkably contribute to the reduction in the size of an electronic device by employing a doped thin film of an amorphous semiconductor for at least one of p or n type layer of a pin junction photoelectric element, thereby largely improving the shortcircuiting current and the opening voltage even under a fluorescent lamp. CONSTITUTION:A photoelectric element is fundamentally formed of a glass 1, a transparent electrode 2, a p type amorphous semiconductor 3, an i type a- Si 4, an n type semiconductor (such as, n type a-Si) 5 and an electrode 6. In this structure, the optical band gap Eg.opt of the amorphous semiconductor of the side to be emitted with light of at least p or n type is higher than approx. 1.85eV, the electric conductivity at 20 deg.C is higher than approx. 10<-3>(OMEGA.cm)<-1>, the diffusing voltage Vd of the p-i-n junction is higher than approx. 1.1V, and an i type layer is formed of amorphous silicon in a photovoltaic element. |
