| 摘要 |
PURPOSE:To build-in a high sensitivity monitor without deterioration of laser operating characteristics in a monitor built-in semiconductor laser element by integrating a phototransitor structure containing a base region formed of a collector electrode and a photo-occluding layer isolated from a current injection electrode. CONSTITUTION:This laser is composed of an active region 11 having a buried structure formed on an n type semiconductor substrate 10, a clad region 12 made of a p type semiconductor, a photoabsorbing layer 13 on the region 12, an n type side electrode 19, a current injection electrode 17, and a collector electrode 18. The layer 13 is formed of n type reverse to the region 12 at the time of growing crystal, and a current injection stripe region 15 connected to the regions 14, 12 by thermal diffusion of the p type impurity is contained therein. The electrodes 17, 18 are electrically isolated via an insulating film 16. |
