| 摘要 |
PURPOSE:To enhance the performance of individual circuit elements of a light source and a photodetector by growing again III-V Group compound semiconductor crystals for the photodetector on the same substrate after a light source is formed and forming the photodetector on this part. CONSTITUTION:A Fabry-Perot resonator for a semiconductor laser is formed at a double hetero junction crystal to become III-V Group compound semiconductor crystals for a semiconductor light source formed on a substrate. Then, this resonator surface is covered with a dielectric film such as SiO2, thereby forming a selective crystal growing mask. Thereafter, III-V Group compound semiconductor crystal (InP, InGaAs, InGaAsP) for the photodetector is grown by a liquid phase epitaxial method at the side of the semiconductor laser. At this time, the more pure the III-V Group crystal is, the more preferable the purity of the crystal is from the reason that the performance of the photodetector is improved. Then, impurity of zinc or cadmium is introduced to the photodetector, thereby forming a p-n junction, and the desired electrodes are eventually formed at the light source and the photodetectors. |
