| 摘要 |
PURPOSE:To enable to sufficiently set an insulating distance by removing the metal layer of the back surface of a wafer without chemical etching, thereby completely removing part of the metal layer. CONSTITUTION:An etching groove 19 of V-shaped section is formed from the back surface of a wafer base 13 side in the wafer already formed of an N-P-N transistor with a collector layer 14, a base layer 15 and an emitter layer, and the wafer is bonded to a die 24 via an adhesive 23. An insulation protecting elastic member 25 such as silicone rubber or the like is filled in the groove 19, and a separable insulation protective film (such as photosensitive resin) 26 is then formed on the member. Then, a gold layer 27 having good ohmically contacting property is covered on the overall back surface of the wafer. The film 26 is exfoliated by adhering and exfoliating the adhesive tape, and the layer 27 on the film is simultaneously removed. Then, it is broken into individual pellets by a dicer 28 along a boundary line 20. |
