| 摘要 |
PURPOSE:To obtain optical images differing in wavelength at the same time, by forming a p-n junction part which senses short-wavelength lignt and a Schottky barrier type photocell which sense long-wavelength light on a silicon substrate. CONSTITUTION:In a semiconductor substrate 11 made of Si, etc., a V-shaped groove is formed, and a metallic film 14 of Al, etc., is adhered. On the top surface of the metallic film 14, a p type Si substrate 12 is arranged and on this substrate 12, the 1st photocell consisting of a p<+> type impurity layer 16 and an n<+> type impurity layer 16', and the 2nd photocell having the Schottky barrier formed of a vapor-deposited film 20 of Pt, etc., and a depletion layer 21 are formed. The 1st photocell (p-n junction) senses short-wavelength light, and the 2nd photocell senses long-wavelength light, so an optical image from a light transmission window 19 is made into signals corresponding to a short-wavelength and a long-wavelength optical image through the photocell, a reflecting mirror 15, and 2nd photocell. |
