发明名称 |
GROWING METHOD FOR LITHIUM TETRABORATE SINGLE CRYSTAL |
摘要 |
PURPOSE:To simply grow an Li2B4O7 single crystal by using a crystal deposited on a metallic wire as a seed crystal to obtain sufficient holding strength of the seed crystal. CONSTITUTION:A noble metallic wire such as a platinum-rhodium wire 9 is fixed to an alumina pipe 8 with alumina cement 10 and calcined by heating to a high temp. This wire 9 as a seed is dipped in molten Li2B4O7 and pulled up under rotation. While pulling up the wire 9, neck-down operation is carried out to obtain a single crystal growing in the direction of the C axis, and the grown single crystal 11 is cut at the thin part 12. The part 12 is repeatedly used as a seed crystal. |
申请公布号 |
JPS5874597(A) |
申请公布日期 |
1983.05.06 |
申请号 |
JP19810171475 |
申请日期 |
1981.10.28 |
申请人 |
TOKYO SHIBAURA DENKI KK |
发明人 |
USHIZAWA JISABUROU;MATSUMURA SADAO |
分类号 |
C01B35/06;C30B15/00;C30B15/32;C30B29/10 |
主分类号 |
C01B35/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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