发明名称 GROWING METHOD FOR LITHIUM TETRABORATE SINGLE CRYSTAL
摘要 PURPOSE:To simply grow an Li2B4O7 single crystal by using a crystal deposited on a metallic wire as a seed crystal to obtain sufficient holding strength of the seed crystal. CONSTITUTION:A noble metallic wire such as a platinum-rhodium wire 9 is fixed to an alumina pipe 8 with alumina cement 10 and calcined by heating to a high temp. This wire 9 as a seed is dipped in molten Li2B4O7 and pulled up under rotation. While pulling up the wire 9, neck-down operation is carried out to obtain a single crystal growing in the direction of the C axis, and the grown single crystal 11 is cut at the thin part 12. The part 12 is repeatedly used as a seed crystal.
申请公布号 JPS5874597(A) 申请公布日期 1983.05.06
申请号 JP19810171475 申请日期 1981.10.28
申请人 TOKYO SHIBAURA DENKI KK 发明人 USHIZAWA JISABUROU;MATSUMURA SADAO
分类号 C01B35/06;C30B15/00;C30B15/32;C30B29/10 主分类号 C01B35/06
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