| 摘要 |
PURPOSE:To obtain an electrophotographic photoreceptor having high resolution, high sensitivity and excellent durability by forming amorphous silicon (a-Si) layers having a depletion layer that forms carriers when irradiated with electromagnetic waves (light) as a photoconductive layer on the barrier layer on a substrate. CONSTITUTION:A barrier layer not shown is formed with a thin layer of Al2O3, SiO, MgF2, etc. on a conductive substrate 9, and an a-Si layer is formed as a layer contg. 1-40atom% H which is not doped or a p type a-Si layer contg. B, etc. or an n type a-Si layer contg. P, etc. on the barrier layer, whereby an inside a-Si layer 12 is formed. Thereafter, an outside a-Si layer 13 of the type differing from the layer 12 is formed on the layer 12 or said layer is formed with the same p type or n type layer at different quantity of doping. A depletion layer 11 is formed between the layers 12 and 13 by such formation, whereby a photoconductive layer 10 is formed. Thus the photoreceptor having various characteristics superior to those in the prior art is obtained. A surface coating layer 14 to serve both as a protecting layer and an antireflecting layer may be provided on the layer 13. |
