| 摘要 |
In a process for producing oxide layers on substrate wafers (6) consisting of silicon or another oxidisable material in an extremely dry oxygen atmosphere or in an oxygen atmosphere with HCl gas added, the substrate wafers (5, 6) to be oxidised are first placed in a zone (a) at less than 100 DEG C in the high-temperature plant. The oxidising gas, which has a moisture content of less than 0.5 ppm, is introduced into the plant from the loading side (1, 2). After flushing the plant free of moisture, the substrate wafers (5, 6) are transferred to the oxidising zone in the centre of the furnace (4), heated to the oxidising temperature, returned to the starting zone (a) after the oxidation time has elapsed and cooled to temperatures of less than 100 DEG C. The process is used in semiconductor technology for the manufacture of VLSI circuits, in particular in producing thin gate oxides, and in thin-film technology. <IMAGE>
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