发明名称 TRI-STATE LOGIC BUFFER CIRCUIT
摘要 A first MOS (metal-oxide-semiconductor) NOR-gate device feeding a second MOS NOR-gate device feeding an MOS output load device is arranged to yield a three output level buffer circuit, that is, a circuit whose output to a common data bus line can be "high" ("1"), "low" ("0"), or of very high impedance ("floating"). Each NOR-gate contains a low ("load") depletion mode MOS transistors (M<u3>u, M<u5>u) and a high ("driver") enhancement mode (M<u4>u, M'<u4>u, M6, M'6) MOS; the output load device contains an output driver enhancement mode MOS transistor (M<u2>u) and an output load MOS transistor (M<u1>u) having a threshold intermediate that of the depletion mode and enhancement mode M0S transistors. In this manner, only a single voltage source V<uDD>u, of typically about +5 volts in N-MOS integrated circuit technology is required to power the buffer circuit completely.
申请公布号 DE3062480(D1) 申请公布日期 1983.05.05
申请号 DE19803062480 申请日期 1980.01.02
申请人 WESTERN ELECTRIC COMPANY, INCORPORATED 发明人 KELLER, JACK KRATZER;MOWERY, GILBERT LEROY, JR.
分类号 H03K19/0175;H03K19/094;(IPC1-7):H03K19/09;H03K17/69;H03K19/01;H03K19/20 主分类号 H03K19/0175
代理机构 代理人
主权项
地址