| 摘要 |
PURPOSE:To easily form a semiconductor single crystal layer in the desired film thickness by constituting a semiconductor crystal layer to be formed on an insulating layer with thin crystal layer and epitaxial layer. CONSTITUTION:After forming an Si oxide film on a single crystal Si substrate 1, an Si oxide film pattern 2 is formed and a through hole 3 is also formed. Then, a thin polycrystal Si film 4 is formed on the surface of substrate 1. Then, surface is annealed by irradiating an energy beam, and thereby the film 4 is single- crystallized and a single-crystal Si layer 5 is formed. At this time, since the film 4 is thin, the area of through hole 3 is not required to be wide. Thereafter, a single crystal layer in the desired thickness consisting of the layers 5 and 6 can be formed by forming the Si epitaxial layer 6 on the layer 5 in the specified thickness. |
