| 摘要 |
PURPOSE:To prevent the leak of accumulation charges through a transistor, by providing an opaque film on a semiconductor layer, when charging thin film capacity via a thin film transistor. CONSTITUTION:On a glass substrate 1, a CdSe layer 2, a Ta2O5 gate film 3, a TaNxO1-x gate electrode 4 and a source electrode 5, drain electrode 6 constituted of the laminated film of Cr 7, Au 8 and In 9 are laid. The opaque Al2O3 film 10 is formed on the layer 2. Or it is also available to cover a protection film with an opaque film 11. In this constitution, even when a light is positively irradiated resulting in the increase of the liquid crystal surface contrast, the light is not incident into the layer 2, the light acts on the thin film transistor, accordingly the accumulation charges of thin film capacity do not leak. Therefore, since the voltage applied on the liquid crystal display element LC is kept constant without decreasing during display, a good picture quality without the variation of the display contrast can be obtained. |
