| 摘要 |
PURPOSE:To obtain a CMISIC in one time of masking process, by implanting p type impurities at high density with an n channel MISFET as a mask after forming it. CONSTITUTION:A p well 2 is provided on an n type Si substrate 1, a gate oxide film 4 and a poly Si gate electrode 5 are formed, and n type impurities are diffused resulting in the formation of the n channel MISFET in the p well. Next, when the well 2 is masked by a resist 8, and p type impurities are diffused at further higher density, the poly Si gate electrode 5 turns into p<+> type from n<+> type, and accordingly a p channel MISFET is formed outside the well without obstacles. In this method, a CMISIC can be formed in one time of masking. |
