发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device where a layer which is present on a substrate and which is locally covered with an organic lacquer layer is etched by bringing the layer into contact with constituents of a plasma which is formed in a gas mixture containing a halogen compound and an oxygen compound. The rate at which the organic lacquer layer is removed by the constituents of the plasma is substantially reduced by the addition of from 1 to 15% by vol. of CO to this gas mixture.
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申请公布号 |
US4381967(A) |
申请公布日期 |
1983.05.03 |
申请号 |
US19810281758 |
申请日期 |
1981.07.09 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
SANDERS, FRANCISCUS H. M.;SANDERS, JOZEF A. M.;DIELEMAN, JAN |
分类号 |
H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/30;C23F1/02 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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