| 摘要 |
PURPOSE:To enable to obtain a favorable high-frequency characteristic and a high reverse gate withstand voltage characteristic at a Schottky gate field effect transistor by a method wherein an active layer between a gate and a source is formed thick, so as to make carrier concentration to be nearly fixed extending over the hole of the active layer. CONSTITUTION:An N type active layer 22, a source electrode 23, and a drain electrode 24 are formed on the surface of a semiinsulating semiconductor substrate 21, and a Schottky gate electrode 25 is formed in the opening part of an insulating film 26. The device is constituted as to have structure that the surface of the layer 22 is flat, and thickness of the active layer 22'' between the source and the drain is made larger than thickness of the active layer 22' directly under the gate, and moreover the active layer 22'' and the electrode 25 are formed according to a pattern consisting of the same insulating material, what is called the selfalignment method is used to form. Therefore positional relation between the electrode 25 and the active layer 22'' is decided automatically. Accordingly the manufacturing process is simplified, while the high-frequency characteristic is improved, and a high reverse gate withstand voltage can be obtained. |
