| 摘要 |
PURPOSE:To prevent completely the destruction of gate to be generated by electric field at an MOS semiconductor device by a method wherein gate electrodes of the plural number are formed in condition being connected mutually in a row to be earthed, and ion implantation is performed making the gate electrodes thereof as a part of mask. CONSTITUTION:The field part of an Si substrate is covered with a field oxide film 3a, and a gate electrode pattern 4 is formed. At this time, auxiliary patterns 5, 5',... to connect the pattern 4 and gate electrode patterns 4' of other MOS transistors in a row at the positions other than electrode formation programming regions are provided. Ion implantation is performed making the gate electrodes and the film 3a as the mask to form source regions S and drain regions D. The auxiliary patterns are earthed through substrate pressing jigs, etc., at the back of the substrate 1, for example. Accordingly because the gate electrodes are earthed, destruction of gate is not generated by ion implantation. |
