HALFGELEIDERLASER EN WERKWIJZE VOOR HET VERVAARDIGEN VAN DEZE LASER.

摘要

A double heterostructure laser diode, which includes a first narrow bandgap active region sandwiched between opposite conductivity type wider bandgap regions, is improved by the inclusion of a second narrow bandgap active region intermediate the first active region, with the bandgap of the second region being narrower than that of the first region. The first active region is preferably between about lambda /2 and lambda in thickness and serves to provide optical confinement, whereas the second active region may approach an electron diameter in thickness and serves to provide carrier confinement.