| 摘要 |
PURPOSE:To effectively recover the crystallization of a simple substance crystal surface layer by a method wherein laser annealing is applied to a material consisting of a compound semiconductor in the atmosphere such as high-pressure argon gas or the like and the material is aimed by laser light. CONSTITUTION:A valve 3 permitting supply and exhaust and the change of closure is provided on the supply and exhaust holes 1', 1'' of a high-pressure container 1 and a quartz glass 7 permitting easy penetration of laser light is provided at a laser incident window 1''' to permit the composition of arbitrary high- pressure atmosphere and a substance applying laser annealing, for example, the sample 2 of arsenide gallium is mounted in a container 1. Firstly, after discharging oxygen gas in the container 1, the valve 3 is transferred and inactive argon gas or the like is supplied to fill the inactive argon gas at about 100atm. Laser light 4 from a light source device is introduced in beam shape through a flexible glass fiber 5 and a condenser lens 6 and a laser annealing process is applied by permitting an arbitrary place of the sample 2 to irradiate by a suitable area. |
