| 摘要 |
PURPOSE:To obtain a resist with high sensitivity to far ultraviolet rays by using monomers including 4-methyl phenyl vinyl ketone to prepare a polymer having a composition contg. at least 10mol% 4-methyl phenyl vinyl ketone units. CONSTITUTION:50 Parts by weight of 4-methyl phenyl vinyl ketone are mixed with 50 parts methyl methacrylate, and after adding 0.1 part polymn. catalyst and carrying out nitrogen substitution, the mixture is polymerized to prepare a polymer contg. at least 10mol% 4-methyl phenyl vinyl ketone units. The polymer is dissolved in methylcellosolve acetate to 6wt% concn. This soln. is applied to a silicon substrate under rotation with a spinner and dried to obtain a resist resin film. This film has high sensitivity to far ultraviolet rays whose wavelengths are shorter than the wavelengths of conventional ultraviolet rays, and it is used as a positive type resist film capable of being dry etched with gaseous CF4. |
