| 摘要 |
PURPOSE:To form a capacitive part accompanied by no damaging to the first insulating film serving as a base of a conductive film and the under semiconductor substrate, by removing the definite part of the conductive film to the definite depth so that this film is partially left. CONSTITUTION:The part, on which a gate electrode of a polycrystal silicon film 3 is formed, is etched to the definite depth so that the polycrystal silicon film 3 is partially left, and then a resist mask 4 is removed. A silicon oxidizing film 15 is formed on the surface of the polycrystal silicon film 3. Such composition does not damage the silicon substrate 1 as well as the insulating film 2 serving as a base of the gate electrode formation part. |
