| 摘要 |
PURPOSE:To relieve electric field strength, and to contrive to enhance the breakdown strangth of a semiconductor device by a method wherein platinum is introduced at least to the interface between the surface of a substrate and a silicon dioxide film in the breakdown strength constructing region in the neighborhood of P-N junction. CONSTITUTION:A high withstand voltage semiconductor device is constructed of a high resistance N-type semiconductor layer (collector) 1, a P-type semiconductor layer (base) 2, guard rings 3, an N-type semiconductor layer (emitter) 4, a high concentration N-type semiconductor layer 5, channel stopper regions 6, platinum diffusion regions 7, oxide films (SiO2 films) 8, electrodes 9 and depletion layers 10. At this time, contact holes are opened on the surfaces of the guard rings 3, and platinum is diffused only to the breakdown strength parts from the hole parts thereof. Accordingly by making interfacial charge of Si-SiO2 to be negative, a transistor having a high breakdown strength and a large amplification factor can be obtained. |
