| 摘要 |
PURPOSE:To improve the integration density of semiconductor memory, by performing cross connection of a pair of transistors with metal silicide layers by a self-aligning method, thereby reducing an area occupied by aluminum interconnection and the like. CONSTITUTION:The cross connection of a pair of multi emitter transistors 51 and 52 is performed with metal silicide layers, which are formed on a polysilicon layer. Namely, the connection of a collector 511 of one transistor 51 and a base 522 of the other transistor 52 is performed with a metal silicide layer 20. The connection of a collector 521 of the other transistor 52 and a base 512 of one transistor 51 is performed with a metal silicide layer 20'. These metal silicide layers 20 and 20' can be formed by a self-aligning method without using a resist agent, masks and the like. An area, which is required when the cross connection of a pair of the transistors 51 and 52 is performed with aluminum interconnection, is reduced, and an area occupied by one memory cell 5 can be reduced. |
