| 摘要 |
PURPOSE:To manufacture a semiconductor light emitting element having excellent characteristics such as low threshold current, high light emission efficiency in a high yield by forming a V-shaped groove in section at both sides of a mesa, thereby facilitating the control in the etching depth. CONSTITUTION:An n type InP layer 24, an active layer 25, and a p type InP layer 26 are sequentially formed on the surface of a n type InP semiconductor substrate 23. An SiO2 stripe mask 27 is formed on a p type InP layer 26. With the SiO2 masks 27, 28 as masks, a masa etching is performed, and a V-shaped groove is formed. After the masks 27, 28 are removed, a p type InP layer 31, an n type InP layer 32 are grown in the groove, and the position of the p-a junction is contacted with the layer 25. A p type InP layer 33 and an n type InP layer 34 are grown even on the mesa 30. An n type InP0.38Ga0.12As0.29P0.71 are subsequently grown, and the surface is formed to be flat. An impurity which reaches at the end to the layer 33 on the mesa is selectively diffused, thereby forming a p<+> type region, an SiO2 film 27 is formed on the layer 35 corresponding to the double hetero junction layer at an interval from the grooves at both sides of the mesa 30 as a current blocking layer. A p type electrode 38 and an n type electrode 39 are formed. |
