| 摘要 |
PURPOSE:To enable to manufacture a high density thin film transistor in high yield by forming an amorphous silicon film on the uppermost layer, thereby enabling to use photoresist of 1,2,3-diazosulfonic acid esters to form an ultrafine pattern. CONSTITUTION:The gate electrode 2 of Ni-Or film is formed on a glass substrate 1, and a gate insulating film 3 of SiO2, an amorphous silicon film 4, a passivation film 5 of SiO2 and an amorphous silicon film are continuously formed on the electrode in lateral layers in the same device. In the formation of an amorphous silicon film, SiH4 is used as stock gas, a substrate is heated to approx. 300 deg.C, thereby obtaining a thin hydrogenated amorphous silicon film of high quality. Then, the four layers are simultaneously patterned, the amorphous silicon layer of the uppermost layer is plasma etched with OF4 gas, and passivation SiO2 film is then etched. Eventually, the amorphous silicon film of the uppermost layer is removed by the plasma etching of OF4. |
