| 摘要 |
PURPOSE:To make a contribution to increase the yield rate of production for the titled device by a method wherein a gentle-sloped stepping is formed on the insulating film to be attached to the surface of a semiconductor substrate, and to completely prevent the generation of disconnection trouble on aluminum wirings. CONSTITUTION:The insulating films 2 and 3, to be adhered to the surface of the semiconductor substrate 1, are formed by two or more layers. The upper layer is to have the film quality with which etching speed is accelerated as compared with that of the lower layer. Then, in order to form a desired pattern on the insulating films 2 and 3, a photoresist film 4 is patterned on the insulating film 3, and an etching process is performed using the photoresist film 4 as a protective film. Due to the difference in etching speed, the etching of etching to be performed on the side face is varied, and as a result, a gentle-sloped stepping can be formed on the surface of the semiconductor substrate 1. |
