| 摘要 |
PURPOSE:To prevent lateral leakage which affects the adverse influences to switching characteristic, high integration or deenergization by utilizing the part of a metal film patterned by an anodic oxidation as source and drain electrodes. CONSTITUTION:In drawings, numeral 11 designates a substrate made of glass, ceramics or semiconductor, 12 a semiconductor film made of patterned Si, Te, GaAs, and 13 a metal film made of material such as Ta, Al to be subjected to an anodic oxidation, which is utilized as source and drain electrodes. Numeral 15 designates metal oxide formed by an anodic oxidation. Metal part 23 utilized for applying a voltage in case of the anodic oxidation and as source and drain electrodes is used for the purpose of the MOS characteristics of the semiconductor film of a thin film transistor as a doped semiconductor film, which is utilized as the lower electrode of a capacitor 26. Numeral 24 designates an upper electrode of a capacitor patterned in case of forming a gate electrode 21 formed on the metal oxidized film formed between the source and the drain, which is formed in contact with the electrode at one side of the source or drain. |
