| 摘要 |
1,173,575. Controlled Schottky diode. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 9 Dec., 1966 [30 Dec., 1965], No. 55258/66. Heading H1K. A controlled diode comprises a thin metallic electrode making a Schottky contact with a semi-conductor body, and a contact layer forming a non-rectifying Peltier junction with the electrode whereby when a bias is applied across this junction hot electrons are injected into and pass through the metallic electrode in order to modulate the current between the Schottky contact and an ohmic contact to the body. A pair of such contact layers may be provided on the electrode and the controlling signal applied between them, or the signal applied between a single contact layer and the electrode. Preferably the electrode is of copper, nickel or gold and the contact layers of vacuum evaporated or cathode sputtered antimony, bismuth telluride or N-type germanium. The contact layers may be interdigitated and the Schottky contact, which is preferably # 10<SP>4</SP> Š thick, formed in an aperture in an oxide coating on the semi-conductor body. |
