| 摘要 |
PURPOSE:To prevent deterioration of the connecting persistence of metal fine wire in a later process by a method wherein high temperature gas is applied for heating in a bonding process to keep clean the surface of a semiconductor chip and a vessel for the chip. CONSTITUTION:A semiconductor vessel 1 consists of an attaching part 3 for bonding a semiconductor chip 2, multiplicity of radially arranged external leads 4, frame 5 for holding together said attaching part 3 and external leads 4. An adhesive agent 8 lies between the semiconductor vessel 1 and the semiconductor chip 2, and a gas nozzle 7 provided with an electric heater 6 is arranged over the semiconductor chip 2. The heater 6 is coupled to a power source and the gas nozzle 7 to a gas supply source. Heating of the combination of the semiconductor vessel 1, semiconductor chip 2, and adhesive agent 8 causes the adhesive agent 8 to lose viscosity to be set and, consequentially, the semiconductor vessel 1 and the semiconductor chip 2 are bonded together tight. |
